STRUCTURE AND MORPHOLOGY OF SIO₂ ON SILICON: A STUDY USING CRYSTAL TRUNCATION ROD SCATTERING

-Anneli Munkholm (SSRL)

The oxide of silicon has been the subject of great interest for several decades both for fundamental scientific reasons and for those of technological interest. The transition from perfect single-crystal silicon to amorphous silicon dioxide occurs in a few atomic layers with few electronically active defects at the interface. We have been using crystal truncation rod scattering to measure the interface morphology as well as the structure within the amorphous oxide. In addition to studying the effect of various cleaning processes on interfacial roughness after oxidation, we have compared our results to those obtained with an atomic force microscope. The differences in the two results can be related to the lateral coherence length of the two techniques. This talk will also include a status report on our study of ordered oxide structures within the thermal oxide.

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